1998. 6. 15
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTA1660
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
HIGH VOLTAGE SWITCHING APPLICATION.
FEATURES
High Voltage : V
CEO
=-150V.
High Transition Frequency : f
T
=120MHz(Typ.).
1W (Monunted on Ceramic Substrate).
Small Flat Package.
Complementary to KTC4372.
MAXIMUM RATING (Ta=25 )
DIM
A
B
D
E
G
H
K
4.70 MAX
2.50 0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1.50 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
SOT-89
C
J
G
D
1
2
3
2. COLLECTOR (HEAT SINK)
A
C
K
J
F
MILLIMETERS
H
1. BASE
3. EMITTER
B
E
F
F
D
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-150
V
Collector-Emitter Voltage
V
CEO
-150
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-50
mA
Base Current
I
B
-10
mA
Collector Power Dissipation
P
C
500
mW
P
C
*
1
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Note : h
FE
Classification O:70 140, Y:120 240
P
C
* : KTA1660 mounted on ceramic substrate (250mm
2
x0.8t)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-150V, I
E
=0
-
-
-0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=-5V, I
C
=0
-
-
-0.1
A
DC Current Gain
h
FE
(Note)
V
CE
=-5V, I
C
=-10mA
70
-
240
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-10mA, I
B
=-1mA
-
-
-0.8
V
Base-Emitter Voltage
V
BE
V
CE
=-5V, I
C
=-30mA
-
-
-0.9
V
Transition Frequency
f
T
V
CE
=-30V, I
C
=-10mA
-
120
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
4.0
5.0
pF
B
Type Name
h Rank
FE
Lot No.
Marking
1998. 6. 15
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KTA1660
Revision No : 1
COLLECTOR CURRENT I (mA)
h - I
FE
DC CURRENT GAIN h
C
I - V
C
CE
CE
COLLECTOR-EMITTER VOLTAGE V (V)
0
-10
C
0
COLLECTOR CURRENT I (mA)
V - I
CE(sat)
C
C
COLLECTOR CURRENT I (mA)
-0.6
-0.03
CE(sat)
COLLECTOR-EMITTER SATURATION
DC CURRENT GAIN h
FE
500
-0.5
COLLECTOR CURRENT I (mA)
C
C
FE
h - I
-2
-4
-6
-8
-10
-12
-20
-30
-40
-50
COMMON
EMITTER
Ta=25 C
I =-100
A
B
-200
A
-300
A
-500
A
-1m
A
-2m
A
-1
-3
-10
-30
-100
10
30
50
100
300
COMMON EMITTER
Ta=25 C
V =-10V
CE
CE
V =-5
V
V
=-2V
CE
C
FE
V =-5V
COMMON EMITTER
300
100
50
30
10
-100
-30
-10
-3
-1
-0.5
500
Ta=100 C
Ta=25 C
Ta=-25 C
COLLECTOR-EMITTER SATURATION
CE(sat)
-0.6
COLLECTOR CURRENT I (mA)
C
C
CE(sat)
V - I
VOLTAGE V (V)
-1
-3
-10
-30
-100
-300
-0.05
-0.1
-0.3
-0.5
-1
-3
-5
CE
COMMON EMITTER
Ta=25 C
I
/
I =20
C
B
I
/
I =
10
C
B
I
/
I =
5
C
B
VOLTAGE V (V)
-1
-3
-10
-30
-100
-300
-0.03
-0.1
-0.05
-0.3
-0.5
-1
-3
-5
COMMON EMITTER
I /I =10
C B
Ta=100
C
Ta=25 C
Ta=-25 C
COLLECTOR CURRENT I (mA)
0
C
-0.2
0
BASE-EMITTER VOLTAGE V (V)
BE
BE
C
I - V
-0.4
-0.6
-0.8
-1.0
-1.2
-10
-20
-30
-40
-50
COMMON EMITTER
V =-5V
CE
T
a=100
C
Ta
=2
5
C
Ta
=
-25
C
1998. 6. 15
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KTA1660
Revision No : 1
COLLECTOR-EMITTER VOLTAGE V (V)
-1
C
SAFE OPERATING AREA
CE
COLLECTOR CURRENT I (mA)
-3
-10
-30
-100
-300
-1
-3
-5
-10
-30
-50
-100
-300
SINGLE NONREPETITIVE
PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
I MAX(PULSE)
C
I MAX(CONTINUOUS)
C
100ms
500ms
DC
O
PERA
TIO
N
COLLECTOR POWER DISSIPATION P (W)
C
0.2
20
0
AMBIENT TEMPERATURE Ta ( C)
Pc - Ta
40
60
80
100
120
140
160
0
0.4
0.6
0.8
1.0
1.2
1 MOUNTED ON CERAMIC
SUBSTRATE(250mm x0.8t)
2 Ta=25 C
2
1
2
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